RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD

PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern formation method with excellent lithographic properties and excellent resist pattern shapes.SOLUTION: The resist composition contains: a base component (A) whose solubility in developing solution is changed by action of acid;...

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Bibliographische Detailangaben
1. Verfasser:	UTSUMI YOSHIYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern formation method with excellent lithographic properties and excellent resist pattern shapes.SOLUTION: The resist composition contains: a base component (A) whose solubility in developing solution is changed by action of acid; an acid generator component (B) generating acid by light exposure; and a nitrogen-containing organic compound (D1) represented by the general formula (d1).