COVER GLASS FOR SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a cover glass for semiconductor package and its manufacturing method which has a suitable thermal expansion coefficient for plastic package, is capable of precision detection of foreign substances and dust by imaging inspection and shows always a small value in α-ray...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MURATA TAKASHI, KOMAI TAKAKO, YODOGAWA MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a cover glass for semiconductor package and its manufacturing method which has a suitable thermal expansion coefficient for plastic package, is capable of precision detection of foreign substances and dust by imaging inspection and shows always a small value in α-ray emission.SOLUTION: This cover glass includes ≤75% SiO, 1.1-20% AlO, 0-10% BO, 0.1-20% NaO, 0-11% KO, and 0-20% alkaline earth metal oxide, in terms of mass%. The mean thermal expansion coefficient is 90-180×10/°C in the temperature range of 30-380°C. Young's modulus is 68 GPa or more. The α-ray emission quantity of the glass is below 0.05 c/cm/hr.