NONVOLATILE STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile storage device capable of improving reliability of a memory using a resistance change material, and to provide a method of manufacturing the same.SOLUTION: A plurality of metal wiring layers 2 are formed above a substrate for forming a semiconductor element so as to extend in a first direction. A plurality of metal wiring layers 3 are formed above the metal wiring layer 2 so as to extend in a second direction perpendicular to the first direction. Memory cells are provided in respective spaces in which the metal wiring layers 2 and the metal wiring layers 3 are crossed. Each memory cell has a configuration in which a selection element and a phase change material layer 7 are connected in parallel. The selection element is processed such that the length in the first direction is longer than that in the first direction of the phase change material layer 7.