PREPARATION METHOD OF SPECIMEN FOR OBSERVING DEFECTIVE PART OF SEMICONDUCTOR DEVICE SUBSTRATE
PROBLEM TO BE SOLVED: To provide a preparation method of a specimen for observing a defective part of a semiconductor device substrate, which enables the fine defective part of the semiconductor device substrate to be easily specified in a short time, so that a thin specimen suitable for transmissio...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a preparation method of a specimen for observing a defective part of a semiconductor device substrate, which enables the fine defective part of the semiconductor device substrate to be easily specified in a short time, so that a thin specimen suitable for transmission electron microscope observation can be made.SOLUTION: A method comprises: a first step of marking an upper surface of a fine defective part in a semiconductor device formed on a silicon semiconductor substrate as an observation object with electron beams or laser beams for location specification using an optical microscope; a second step of fixing the specified location on a support base; a third step of making a specimen for plane observation by thinning the substrate through pruning both surfaces with FIB processing to such an extent that an electron penetrates the substrate; a fourth step of specifying the fine defective part with STEM observation; a fifth step of newly marking the defective part after specifying the fine defective part; and a sixth step of cutting the specimen with FIB to make a specimen for section observation. |
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