SUBSTRATE PROCESSING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a cold wall type substrate processing device and a method for manufacturing a semiconductor device in which a number of substrates which can be processed at one time is increased.SOLUTION: A boat 217 on which a plurality of wafers 200 is loaded is disposed inside a t...

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Hauptverfasser:	TANIUCHI MASAMICHI, KUNII YASUO, MAEDA TAKAHIRO, HIRANO MAKOTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a cold wall type substrate processing device and a method for manufacturing a semiconductor device in which a number of substrates which can be processed at one time is increased.SOLUTION: A boat 217 on which a plurality of wafers 200 is loaded is disposed inside a treatment furnace 202, and a plurality of ring-shaped plates 311 formed in a ring shape is supported by a ring boat 312 and arranged in the loading direction of the wafers 200 on the outer peripheral side of the boat 217. The ring-shaped plates 311 are inductively heated by an induction heating device 206, and the wafers 200 are heated from the entire outer peripheral edge by the radiant heat. A gas supply nozzle 232 is disposed on the outer peripheral side of the ring-shaped plates 311, and gas discharged from a gas supply port 232a of the gas supply nozzle 232 is supplied to the wafers 200 through gaps between the plurality of adjacent ring-shaped plates 311.