SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide a substrate processing device, capable of improving in-plane uniformity of an etching amount on a substrate to be processed when etching the substrate to be processed.SOLUTION: A substrate processing device comprises: a processing chamber having a gas supply unit and an exhaust unit; a retention member disposed in the processing chamber, for retaining the substrate to be processed rotatably and vertically movably; a first temperature regulator for controlling gas temperature to be supplied to the chamber; an etchant supply member for etching by supplying etchant to the substrate to be processed; an etchant supply tank connected to the etchant supply member outside the chamber; a second temperature regulator for controlling etchant temperature in a tank; and a control mechanism for controlling the gas temperature and the etchant temperature by the first and second temperature regulators, in such a manner that the temperature in the chamber is higher than the etchant temperature in the tank, and the temperature difference therebetween is maintained constant.