CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD

PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus capable of suppressing deterioration of lithography accuracy caused by distortion of the deflection of a deflector.SOLUTION: The charged particle beam lithography apparatus 100 for lithographing a sample by deflection con...

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Hauptverfasser: GOMI SAORI, INOUE HIDEO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus capable of suppressing deterioration of lithography accuracy caused by distortion of the deflection of a deflector.SOLUTION: The charged particle beam lithography apparatus 100 for lithographing a sample by deflection control of a charged particle beam and irradiation therewith comprises: a lithography data storage part 106 for storing lithography data defined as a plurality of graphics; a shot data generation part 140 for converting lithography data to constitute a shot of a charged particle beam as an unit, and generating shot data divided into a plurality of unit lithography areas; a deflection area information addition part 150 for adding deflection area information for specifying an area available to lithography of an unit lithography area to the shot data for every unit lithography area in the deflection area of the deflector; a deflection control data generation part 160 for generating the deflection control data of the deflector from shot data with added deflection area information; and a lithography part 102 for lithographing while switching an area in the deflection area used for every unit lithography area using the deflection control data.