COMPOUND SEMICONDUCTOR DEVICE

COMPOUND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing the occurrence of a deposit on a surface of Au wiring even if the device is exposed to a high temperature.SOLUTION: Wiring coating layers 5 and 5', which cover a lower wiring layer 3a and an...

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Bibliographische Detailangaben
Hauptverfasser: YATABE CHIKARA, UMEZAWA TOSHIMASA, KAWAGUCHI KEIZO, HAMAGUCHI TOYOAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing the occurrence of a deposit on a surface of Au wiring even if the device is exposed to a high temperature.SOLUTION: Wiring coating layers 5 and 5', which cover a lower wiring layer 3a and an upper wiring layer 3b composed of Au on or above a compound semiconductor substrate 1 and are composed of tantalum or titanium that is a metal having a smaller thin film stress than Au and having a high melting point than Au, are formed by sputter.