CONDUCTIVE OXIDE LAYER CRYSTAL-ORIENTED ON AMORPHOUS BASE MATERIAL AND FORMATION METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a base body having a conductive oxide layer of LaNiO, LaNiOor SrRuOor the like which is crystalline with excellent orientation on an amorphous base material.SOLUTION: In the method of forming a crystalline La-Ni-O-based material layer on the amorphous base material,...

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Hauptverfasser:	MATSUSHIMA MASAAKI, FUNAKUBO HIROSHI, YAMADA TOMOAKI, HOSOKAWA TADATOSHI, YAMAMOTO SATOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a base body having a conductive oxide layer of LaNiO, LaNiOor SrRuOor the like which is crystalline with excellent orientation on an amorphous base material.SOLUTION: In the method of forming a crystalline La-Ni-O-based material layer on the amorphous base material, a first layer of an La-Ni-O-based material is formed at a first temperature on the amorphous base material, then a second layer of the La-Ni-O-based material is formed on the first layer of the La-Ni-O-based material under a second temperature condition higher than the first temperature, wherein the crystal orientation of the second layer of the La-Ni-O-based material is higher than that of the first layer of the La-Ni-O-based material. The conductive oxide layer of SrRuOor the like can be provided on the La-Ni-O-based material.