FLUORIDE SINGLE CRYSTAL, SCINTILLATOR, AND METHOD FOR MANUFACTURING FLUORIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a scintillator capable of highly sensitively detecting high-energy photons such as hard X-rays and γ-rays.SOLUTION: The scintillator is composed of a fluoride single crystal composed of lutetium fluoride containing at least one element selected from Nd, Er and Tm. Th...

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Hauptverfasser:	NAGAMI TOMOFUMI, YOSHIKAWA AKIRA, ISHIZU SUMUTO, FUKUDA KENTARO, KAWAGUCHI NORIAKI, YANAGIDA TAKEYUKI, YOKOTA ARITAME
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DYES GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NUCLEAR ENGINEERING NUCLEAR PHYSICS PAINTS PHYSICS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a scintillator capable of highly sensitively detecting high-energy photons such as hard X-rays and γ-rays.SOLUTION: The scintillator is composed of a fluoride single crystal composed of lutetium fluoride containing at least one element selected from Nd, Er and Tm. The fluoride single crystal is obtained, for example, by adding a fluoride of at least one element selected from Nd, Er and Tm to a raw material mixture prepared by mixing at least lutetium fluoride and an alkaline metal fluoride, melting the mixture to make a raw material melt, and growing a fluoride single crystal from the raw material melt by using a pulling-up method wherein the growing rate is set at ≤vrepresented by expression: v=αR/d(wherein α is 0.0062; R denotes a rotation frequency (rpm) of the single crystal to the raw material melt; and d denotes an average diameter (mm) of the single crystal).