SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device including n-type and p-type transistors each having a transistor in which electrical resistance at a connecting portion between a source/drain region and a contact plug is reduced and the occurence of a short channel effect is suppressed; and a...

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Bibliographische Detailangaben
Hauptverfasser:	YONEHAMA KEISUKE, IZUMI TATSUO, SUGIMAE KIKUKO, KUTSUKAKE HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device including n-type and p-type transistors each having a transistor in which electrical resistance at a connecting portion between a source/drain region and a contact plug is reduced and the occurence of a short channel effect is suppressed; and a method for manufacturing the same.SOLUTION: A semiconductor device is provided, including an impurity high concentration region formed in the vicinity of the interface between a first source/drain region and a first contact plug in the first source/drain region. At least one side of a spreading width of an outline of the impurity high concentration region from an outline of an bottom surface of the first contact plug, in a longitudinal direction of the bottom surface of the first contact plug, is greater than a spreading width of the outline of the impurity high concentration region from the outline of the bottom surface of the first contact plug, in a short-side direction of the bottom surface of the first contact plug.