CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad achieving both of an improvement in flatness of a surface to be polished in CMP (chemical mechanical polishing) and reduction of polishing defect (scratch), and a chemical mechanical polishing method using the chemical mechanical p...

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Bibliographische Detailangaben
Hauptverfasser:	TANO HIROYUKI, YOKOI KATSUTAKA, SHIDA HIROTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad achieving both of an improvement in flatness of a surface to be polished in CMP (chemical mechanical polishing) and reduction of polishing defect (scratch), and a chemical mechanical polishing method using the chemical mechanical polishing pad.SOLUTION: The chemical mechanical polishing pad includes a polishing layer. The residual strain in the tension state of the polishing layer is 10% or less, and the breaking elongation in the tension state of the polishing layer is 50% or less.