SYSTEM AND METHOD FOR EUV LIGHT SOURCE MEASUREMENT

PROBLEM TO BE SOLVED: To provide a measurement apparatus for an extreme ultraviolet (EUV) light source.SOLUTION: A system and method for "EUV light source" measurement are provided. In a first mode, a system for measuring an EUV light source power output includes a photoelectron raw materi...

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Hauptverfasser:	FOMENKOV IGOR V, HOFFMAN JERZY R, BOWERING NORBERT L
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MEASURING NANOTECHNOLOGY NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a measurement apparatus for an extreme ultraviolet (EUV) light source.SOLUTION: A system and method for "EUV light source" measurement are provided. In a first mode, a system for measuring an EUV light source power output includes a photoelectron raw material arranged along an EUV path, and the material is caused to be exposed for generating photoelectron in a curtain amount. The system, further, may include a detector which detects the photoelectron for generating an output representing EUV power. In another mode, the system for measuring EUV light intensity includes a multilayer mirror, for example Mo/Si, which can be arranged along the EUV light path, and can cause the mirror to be exposed for generating an optical current at the mirror. A current monitor can be connected to the mirror to measure the optical current to generate an output representing the EUV power. Further, in other mode, an off-line EUV measurement system can include an instrument for measuring an optical characteristic as well as an MoSi/Si multilayer mirror.