PHOTOMASK, APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD FOR ARRANGING PHOTOMASK PATTERN

PROBLEM TO BE SOLVED: To provide a photomask capable of acquiring a large depth of focus even if four main patterns are annularly arranged at random.SOLUTION: The photomask has four annularly arranged main patterns MP1-MP4 based on design information of a circuit pattern to be formed on a wafer SB,...

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Bibliographische Detailangaben
Hauptverfasser:	ISHIBASHI MANABU, SHIGENIWA AKEMI, OKUNO MITSURU, MINAMIDE AYUMI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a photomask capable of acquiring a large depth of focus even if four main patterns are annularly arranged at random.SOLUTION: The photomask has four annularly arranged main patterns MP1-MP4 based on design information of a circuit pattern to be formed on a wafer SB, and a sub-pattern SP is arranged at an intersection point O of two diagonal lines L1 and L2 of a quadrangle Q formed by four vertices inside the four main patterns MP1-MP4 in order to increase a depth of focus of an exposure pattern. Therefore, the depth of focus can be increased even if the main patterns MP are not arranged at a constant pitch.