CMOS CIRCUIT AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a CMOS circuit and a semiconductor device which have a small leak current even when a threshold voltage Vis small and which operate at a high speed with a small voltage amplitude.SOLUTION: An output stage circuit includes an MOST(M) in which a sub-threshold current f...

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Hauptverfasser: YAMAOKA MASANAO, ITO KIYOO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a CMOS circuit and a semiconductor device which have a small leak current even when a threshold voltage Vis small and which operate at a high speed with a small voltage amplitude.SOLUTION: An output stage circuit includes an MOST(M) in which a sub-threshold current flows substantially between a drain and a source when the voltage of the gate is made equal to that of the source. In the output stage circuit, a voltage is applied to the gate of the MOST(M) to reversely bias between the gate and the source of the MOST(M) when the output stage circuit is inactive. That is, a higher voltage is applied to the gate compared with a p-type source when the MOST(M) is a p-channel type, and a lower voltage is applied to the gate compared with an n-type source when the MOST(M) is an n-channel type. When the output stage circuit is active, the reverse bias state is hold or the state is controlled to be a forward bias state according to an input voltage.