APPARATUS AND METHOD OF PROCESSING SUBSTRATE

PROBLEM TO BE SOLVED: To provide an apparatus and a method of processing a substrate in which deposition of reaction products in the processing chamber and the exhaust line can be minimized, and corrosion due to hydrogen chloride gas can be inhibited.SOLUTION: The method of processing a substrate in...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SUZAKI KENICHI, MIYASHITA TOMOYASU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an apparatus and a method of processing a substrate in which deposition of reaction products in the processing chamber and the exhaust line can be minimized, and corrosion due to hydrogen chloride gas can be inhibited.SOLUTION: The method of processing a substrate includes a first step for forming a film on a substrate in the processing chamber 201, and a second step for taking atmosphere into the processing chamber 201 from the outside thereof following to the first step, generating at least hydrogen chloride gas by causing reaction between a matter adhering to the inside of the processing chamber 201 or the inside of an exhaust line connected thereto and moisture contained in the atmosphere, and exhausting hydrogen chloride gas from the exhaust line. The second step is sustained until the concentration of hydrogen chloride gas in the processing chamber 201 goes below a set concentration.