SILICON CARBIDE SINGLE CRYSTAL
PROBLEM TO BE SOLVED: To provide a high quality silicon carbide single crystal which is excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, and suitable for electronic and optical devices and the like, and shows no contamination of polycrystals and polymor...
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| creator | ENDO SHIGEKI MARUYAMA TAKAYUKI |
| description | PROBLEM TO BE SOLVED: To provide a high quality silicon carbide single crystal which is excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, and suitable for electronic and optical devices and the like, and shows no contamination of polycrystals and polymorphs and no defect of micropipes and the like.SOLUTION: The silicon carbide single crystal is produced by a method for producing a silicon carbide single crystal, in which a sublimated sublimation raw material is re-crystallized on a seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes. The maximum diameter of the silicon carbide single crystal is larger than the diameter of the seed crystal. |
| format | Patent |
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The maximum diameter of the silicon carbide single crystal is larger than the diameter of the seed crystal.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120308&DB=EPODOC&CC=JP&NR=2012046424A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120308&DB=EPODOC&CC=JP&NR=2012046424A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ENDO SHIGEKI</creatorcontrib><creatorcontrib>MARUYAMA TAKAYUKI</creatorcontrib><title>SILICON CARBIDE SINGLE CRYSTAL</title><description>PROBLEM TO BE SOLVED: To provide a high quality silicon carbide single crystal which is excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, and suitable for electronic and optical devices and the like, and shows no contamination of polycrystals and polymorphs and no defect of micropipes and the like.SOLUTION: The silicon carbide single crystal is produced by a method for producing a silicon carbide single crystal, in which a sublimated sublimation raw material is re-crystallized on a seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes. 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The maximum diameter of the silicon carbide single crystal is larger than the diameter of the seed crystal.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SILICON CARBIDE SINGLE CRYSTAL |
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