SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a high quality silicon carbide single crystal which is excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, and suitable for electronic and optical devices and the like, and shows no contamination of polycrystals and polymor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ENDO SHIGEKI, MARUYAMA TAKAYUKI
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a high quality silicon carbide single crystal which is excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, and suitable for electronic and optical devices and the like, and shows no contamination of polycrystals and polymorphs and no defect of micropipes and the like.SOLUTION: The silicon carbide single crystal is produced by a method for producing a silicon carbide single crystal, in which a sublimated sublimation raw material is re-crystallized on a seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes. The maximum diameter of the silicon carbide single crystal is larger than the diameter of the seed crystal.