CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME

CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad which can improve a flatness of a surface to be polished in CMP and reduce a polishing defect (scratch) at the same time and a chemical mechanical polishing method using the chemical mechanical polishing pad.SOLUTION: The chemical...

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Bibliographische Detailangaben
Hauptverfasser: TANO HIROYUKI, KAMO OSAMU, NISHIGUCHI NAOKI, MAEKAWA AYAKO, TONSHO SHINJI, SATO KEIICHI, SHIDA HIROTAKA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad which can improve a flatness of a surface to be polished in CMP and reduce a polishing defect (scratch) at the same time and a chemical mechanical polishing method using the chemical mechanical polishing pad.SOLUTION: The chemical mechanical polishing pad has a polishing layer formed with a composition including thermoplastic polyurethane. The specific gravity of the polishing layer is 1.15 or higher and 1.30 or lower and the duro D hardness of the polishing layer is 50D or higher and 80D or lower.