SUBSTRATE PROCESSING DEVICE AND TEMPERATURE CONTROL METHOD
PROBLEM TO BE SOLVED: To provide a substrate processing device which requires little installation space and is provided with temperature control means capable of simplifying the device configuration.SOLUTION: The substrate processing device comprises: a chamber 11 to which plasma processing is perfo...
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| creator | KIKUCHI EIICHIRO SASAKI YASUHARU MATSUZAKI KAZUAI |
| description | PROBLEM TO BE SOLVED: To provide a substrate processing device which requires little installation space and is provided with temperature control means capable of simplifying the device configuration.SOLUTION: The substrate processing device comprises: a chamber 11 to which plasma processing is performed; a susceptor 12 for mounting a substrate in the chamber 11; a shower head 14 provided so as to be opposed to the susceptor 12 separated from a processing space S; high frequency power supply 15 for generating plasma by applying high frequency electric power to the processing space S; a water spraying device 16 for forming a water wet face on the back side 12b of a front surface 12a of the susceptor 12 served as a temperature control face; an evaporation chamber 17 for isolating the water wet face from the ambient atmosphere; and pressure regulation devices 18, 19 for adjusting the pressure in the evaporation chamber 17. In the substrate processing device, water forming the wet face is evaporated by adjusting the pressure in the evaporation chamber 17 by the pressure regulation devices 18, 19, and the temperature of the front surface 12a of the susceptor 12 is controlled using the evaporation latent heat of water. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2012044041A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2012044041A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2012044041A3</originalsourceid><addsrcrecordid>eNrjZLAKDnUKDglyDHFVCAjyd3YNDvb0c1dwcQ3zdHZVcPRzUQhx9Q1wBcqHBrkqOPv7hQT5-yj4uoZ4-LvwMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0MjAxMTAxNDR2OiFAEAKXUppg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUBSTRATE PROCESSING DEVICE AND TEMPERATURE CONTROL METHOD</title><source>esp@cenet</source><creator>KIKUCHI EIICHIRO ; SASAKI YASUHARU ; MATSUZAKI KAZUAI</creator><creatorcontrib>KIKUCHI EIICHIRO ; SASAKI YASUHARU ; MATSUZAKI KAZUAI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a substrate processing device which requires little installation space and is provided with temperature control means capable of simplifying the device configuration.SOLUTION: The substrate processing device comprises: a chamber 11 to which plasma processing is performed; a susceptor 12 for mounting a substrate in the chamber 11; a shower head 14 provided so as to be opposed to the susceptor 12 separated from a processing space S; high frequency power supply 15 for generating plasma by applying high frequency electric power to the processing space S; a water spraying device 16 for forming a water wet face on the back side 12b of a front surface 12a of the susceptor 12 served as a temperature control face; an evaporation chamber 17 for isolating the water wet face from the ambient atmosphere; and pressure regulation devices 18, 19 for adjusting the pressure in the evaporation chamber 17. In the substrate processing device, water forming the wet face is evaporated by adjusting the pressure in the evaporation chamber 17 by the pressure regulation devices 18, 19, and the temperature of the front surface 12a of the susceptor 12 is controlled using the evaporation latent heat of water.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120301&DB=EPODOC&CC=JP&NR=2012044041A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120301&DB=EPODOC&CC=JP&NR=2012044041A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIKUCHI EIICHIRO</creatorcontrib><creatorcontrib>SASAKI YASUHARU</creatorcontrib><creatorcontrib>MATSUZAKI KAZUAI</creatorcontrib><title>SUBSTRATE PROCESSING DEVICE AND TEMPERATURE CONTROL METHOD</title><description>PROBLEM TO BE SOLVED: To provide a substrate processing device which requires little installation space and is provided with temperature control means capable of simplifying the device configuration.SOLUTION: The substrate processing device comprises: a chamber 11 to which plasma processing is performed; a susceptor 12 for mounting a substrate in the chamber 11; a shower head 14 provided so as to be opposed to the susceptor 12 separated from a processing space S; high frequency power supply 15 for generating plasma by applying high frequency electric power to the processing space S; a water spraying device 16 for forming a water wet face on the back side 12b of a front surface 12a of the susceptor 12 served as a temperature control face; an evaporation chamber 17 for isolating the water wet face from the ambient atmosphere; and pressure regulation devices 18, 19 for adjusting the pressure in the evaporation chamber 17. In the substrate processing device, water forming the wet face is evaporated by adjusting the pressure in the evaporation chamber 17 by the pressure regulation devices 18, 19, and the temperature of the front surface 12a of the susceptor 12 is controlled using the evaporation latent heat of water.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKDnUKDglyDHFVCAjyd3YNDvb0c1dwcQ3zdHZVcPRzUQhx9Q1wBcqHBrkqOPv7hQT5-yj4uoZ4-LvwMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0MjAxMTAxNDR2OiFAEAKXUppg</recordid><startdate>20120301</startdate><enddate>20120301</enddate><creator>KIKUCHI EIICHIRO</creator><creator>SASAKI YASUHARU</creator><creator>MATSUZAKI KAZUAI</creator><scope>EVB</scope></search><sort><creationdate>20120301</creationdate><title>SUBSTRATE PROCESSING DEVICE AND TEMPERATURE CONTROL METHOD</title><author>KIKUCHI EIICHIRO ; SASAKI YASUHARU ; MATSUZAKI KAZUAI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2012044041A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KIKUCHI EIICHIRO</creatorcontrib><creatorcontrib>SASAKI YASUHARU</creatorcontrib><creatorcontrib>MATSUZAKI KAZUAI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIKUCHI EIICHIRO</au><au>SASAKI YASUHARU</au><au>MATSUZAKI KAZUAI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING DEVICE AND TEMPERATURE CONTROL METHOD</title><date>2012-03-01</date><risdate>2012</risdate><abstract>PROBLEM TO BE SOLVED: To provide a substrate processing device which requires little installation space and is provided with temperature control means capable of simplifying the device configuration.SOLUTION: The substrate processing device comprises: a chamber 11 to which plasma processing is performed; a susceptor 12 for mounting a substrate in the chamber 11; a shower head 14 provided so as to be opposed to the susceptor 12 separated from a processing space S; high frequency power supply 15 for generating plasma by applying high frequency electric power to the processing space S; a water spraying device 16 for forming a water wet face on the back side 12b of a front surface 12a of the susceptor 12 served as a temperature control face; an evaporation chamber 17 for isolating the water wet face from the ambient atmosphere; and pressure regulation devices 18, 19 for adjusting the pressure in the evaporation chamber 17. In the substrate processing device, water forming the wet face is evaporated by adjusting the pressure in the evaporation chamber 17 by the pressure regulation devices 18, 19, and the temperature of the front surface 12a of the susceptor 12 is controlled using the evaporation latent heat of water.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE PROCESSING DEVICE AND TEMPERATURE CONTROL METHOD |
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