SUBSTRATE PROCESSING DEVICE AND TEMPERATURE CONTROL METHOD

PROBLEM TO BE SOLVED: To provide a substrate processing device which requires little installation space and is provided with temperature control means capable of simplifying the device configuration.SOLUTION: The substrate processing device comprises: a chamber 11 to which plasma processing is perfo...

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Bibliographische Detailangaben
Hauptverfasser: KIKUCHI EIICHIRO, SASAKI YASUHARU, MATSUZAKI KAZUAI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a substrate processing device which requires little installation space and is provided with temperature control means capable of simplifying the device configuration.SOLUTION: The substrate processing device comprises: a chamber 11 to which plasma processing is performed; a susceptor 12 for mounting a substrate in the chamber 11; a shower head 14 provided so as to be opposed to the susceptor 12 separated from a processing space S; high frequency power supply 15 for generating plasma by applying high frequency electric power to the processing space S; a water spraying device 16 for forming a water wet face on the back side 12b of a front surface 12a of the susceptor 12 served as a temperature control face; an evaporation chamber 17 for isolating the water wet face from the ambient atmosphere; and pressure regulation devices 18, 19 for adjusting the pressure in the evaporation chamber 17. In the substrate processing device, water forming the wet face is evaporated by adjusting the pressure in the evaporation chamber 17 by the pressure regulation devices 18, 19, and the temperature of the front surface 12a of the susceptor 12 is controlled using the evaporation latent heat of water.