PLASMA PROCESSING APPARATUS AND PRODUCTION METHOD OF THIN FILM USING IT

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a cathode electrode provided with a plurality of recesses or exhaust holes in which plasma is generated only in the vicinity of the cathode electrode and generation of plasma is minimized in the vicinity of a substrate, unnecessar...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAMOTO KEITARO, NOMURA FUMIYASU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a cathode electrode provided with a plurality of recesses or exhaust holes in which plasma is generated only in the vicinity of the cathode electrode and generation of plasma is minimized in the vicinity of a substrate, unnecessary substance is prevented from being mixed into a film, and plasma can be generated uniformly in all recesses or exhaust holes of the cathode electrode.SOLUTION: In the plasma processing apparatus, an anode electrode is arranged between the cathode electrode provided with recesses or exhaust holes and a substrate holding mechanism, the anode electrode is provided with a through hole at a position facing the recess or exhaust hole of the cathode electrode, and the distance between the cathode electrode and anode electrode is variable.