WAFER, WAFER MANUFACTURING METHOD AND CAPACITANCE TYPE ACCELERATION SENSOR MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a wafer, a wafer manufacturing method and a capacitance type acceleration sensor manufacturing method which reduce an influence of static electricity on a type encapsulated by encapsulation substrates.SOLUTION: The wafer 1 held by a wafer carrier (conductive member)...

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Bibliographische Detailangaben
Hauptverfasser: FUKAURA TERUYA, KATSUKI SHINICHIRO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a wafer, a wafer manufacturing method and a capacitance type acceleration sensor manufacturing method which reduce an influence of static electricity on a type encapsulated by encapsulation substrates.SOLUTION: The wafer 1 held by a wafer carrier (conductive member) 10 comprises: a semiconductor substrate 2; a pair of encapsulation substrates 3 of insulation provided so as to sandwich one surface and the other surface of the semiconductor substrate 2; and a conductive layer 4 provided at least on either one surface side or the other surface side of the wafer 1 at a periphery 1a and electrically connected with the semiconductor substrate 2, and provided on at least a part of the encapsulation substrate 3 so as to be electrically connected with the wafer carrier (conductive member) 10.