NONVOLATILE MAGNETIC MEMORY DEVICE

PROBLEM TO BE SOLVED: To ensure that, in a nonvolatile magnetic memory device of perpendicular magnetization type with its axis of easy magnetization in a recording layer directed in a vertical direction, the axis of easy magnetization of the recording layer is surely directed in a vertical direction.SOLUTION: A nonvolatile magnetic memory device includes a magnetoresistance effect element comprised of a laminate structure 50 having a recording layer whose axis of easy magnetization is directed in a vertical direction, a first wiring 41, and a second wiring 42. Above the laminate structure 50, or below the laminate structure 50, or above and below the laminate structure 50 is disposed a low Young's modulus region 481 having a Young's modulus lower than that of a material which constitutes a recording layer 53. The laminate structure 50 further includes a magnetization reference layer 51, so that disposition of the low Young's modulus region 481 gives rise to internal stresses in the recording layer 53 and the magnetization reference layer 51, whereby the perpendicular magnetization anisotropies of the recording layer 53 and the magnetization reference layer 51 are increased.