SEMICONDUCTOR LASER ELEMENT

PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of preventing an occurrence of a ripple in a far-field pattern (FFP).SOLUTION: A blue-violet semiconductor laser element 100 (a semiconductor laser element) comprises: a semiconductor element layer 10 including an active layer 14 and a ridge portion 3 (a current-path portion) formed so as to extend along an extending direction (an A direction) of a resonator above the active layer 14; and trenches 5a and 5b that are formed so as to extend along the A direction with a distance L1 from the center of the ridge portion 3 toward the width direction (a B direction), and penetrate and separate at least a portion from a top surface 17c at the side on which the ridge portion 3 is formed to the active layer 14 in the semiconductor element layer 10 in a C1 direction.