METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide method of manufacturing a semiconductor light-emitting device manufacturing for solving the problems that when a nondestructive inspection based on heat conduction that is known as the nondestructive inspection for a joint state of a flip-chip bonded semiconductor element is applied to an LED device having a resin encapsulation layer, it becomes difficult to determine the joint state so that manufacturing efficiency is not increased.SOLUTION: The method of manufacturing an LED device 10 with a circuit substrate 12 on which a semiconductor light-emitting element 13 is flip-chip bonded comprises: a substrate preparation step of preparing a collective substrate 51 on which the LED elements 13 are mounted; a joint determination step of heating the collective substrate 51 and measuring a temperature of a rear face of the LED element 13 by using a thermography 52 to determine quality of a joint state at an inspection part 53,; an encapsulation step of encapsulating the collective substrate 51 with a resin layer 11 containing a fluorescent material; and a dividing step of cutting the collective substrate 51 in pieces to obtain individual semiconductor light-emitting devices 10. Accordingly, the temperature of the LED element 13 is measured in such a state that the rear face is exposed, so that quality determination of the joint state can be precisely performed. And further, the collective substrate in which LED elements 13 are closely gathered is inspected, thereby increasing manufacturing efficiency.