SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a CSP semiconductor device which does not form a ledge from second wiring protruding toward a dicing line direction when forming the second wiring connected to a rear face of first wiring formed on a surface of the semiconductor chip near a side face portion, in such a manner as to extend from the rear face side of the semiconductor chip to a rear face of the semiconductor chip through the stepped portion of a window formed for exposing the rear face of the first wiring.SOLUTION: A semiconductor device manufacturing method comprises steps of bonding a grass substrate 4 via a resin 5 serving as an adhesion material with a semiconductor substrate 1 on which first wiring 3 is formed on a surface near a dicing line S, forming a window 20 having inclined wall surfaces centering on the dicing line S by performing etching from a rear face of the semiconductor substrate 1, and forming second wiring connected to a rear face of the first wiring 3 exposed inside the window 20 and extended on a wall surface stretching in a vertical direction with respect to the dicing line S among wall surfaces of the window 20 to a rear face of the semiconductor substrate 1.