METHOD FOR CONTINUOUSLY CASTING SILICON INGOT

PROBLEM TO BE SOLVED: To provide a method for continuously casting silicon ingots, that can reduce contamination due to impurities in the outer periphery of the silicon ingot.SOLUTION: The method for continuously casting silicon ingots comprises: introducing a silicon material into an electroconduct...

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1. Verfasser:	NAITO NORIMASA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for continuously casting silicon ingots, that can reduce contamination due to impurities in the outer periphery of the silicon ingot.SOLUTION: The method for continuously casting silicon ingots comprises: introducing a silicon material into an electroconductive bottomless cooling crucible 7 that is arranged inside a chamber 1 while supplying an inert gas into the chamber 1; melting the silicon material through induction heating caused by an induction coil 8 surrounding the bottomless cooling crucible 7; and solidifying the molten silicon 12 while lowering the same from the bottomless cooling crucible 7. In supplying the inert gas into the chamber 1, the inert gas is supplied above the molten silicon 12 and also to the lower section of the silicon ingot 3, and the inert gas supplied to the lower section is circulated around the outer periphery of the silicon ingot.