PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device with a new reflection prevention structure.SOLUTION: A reflection prevention structure is obtained not by etching a surface of a semiconductor substrate or a semiconductor film to form the reflection prevention structure but by makin...

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Bibliographische Detailangaben
Hauptverfasser:	NISHIDA JIRO, KURISHIRO KAZUKI, KATAISHI RIHO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a photoelectric conversion device with a new reflection prevention structure.SOLUTION: A reflection prevention structure is obtained not by etching a surface of a semiconductor substrate or a semiconductor film to form the reflection prevention structure but by making a homogeneous or heterogeneous semiconductor grow on a semiconductor surface to obtain a projecting and recessed structure. For example, a semiconductor layer having a plurality of protrusions on a surface thereof is provided on a light incident surface side of a photoelectric conversion device to reduce surface reflection drastically. Such a structure can be produced by the vapor-phase growth, therefore, a semiconductor is not contaminated.