SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To prevent a situation in which it takes a lot of time until completion of exhaustion by immediately recognizing the fact that exhaustion of gas is not started correctly while avoiding mixture of a plurality of kinds of processing gas.SOLUTION: The substrate processing apparatu...

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Bibliographische Detailangaben
Hauptverfasser:	UMEMOTO MAMORU, KONYA TADASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent a situation in which it takes a lot of time until completion of exhaustion by immediately recognizing the fact that exhaustion of gas is not started correctly while avoiding mixture of a plurality of kinds of processing gas.SOLUTION: The substrate processing apparatus comprises: a processing chamber in which a substrate is contained; a gas supply system which supplies a plurality of kinds of processing gas mixture of which must be avoided into the processing chamber via piping, i.e. the passage of the processing gas; and a gas exhaust system which exhausts gas in the processing chamber and the piping. The substrate processing apparatus is further provided with a control unit which controls a display to display the state of gas stagnating in the piping in at least three stages of gas stagnation state, under exhaustion state, and exhaustion completion state.