METHOD OF PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of producing a silicon carbide semiconductor device in which there is no occurence of roughness over the entire surface of a silicon carbide wafer.SOLUTION: A method of producing a silicon carbide semiconductor device comprises a step of performing ion injec...

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Hauptverfasser:	CHIKUNO TAKASHI, SHIOMI HIROSHI, TAMASO HIDETO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of producing a silicon carbide semiconductor device in which there is no occurence of roughness over the entire surface of a silicon carbide wafer.SOLUTION: A method of producing a silicon carbide semiconductor device comprises a step of performing ion injection of an impurity 30i into a silicon carbide wafer 10, a step of forming a diamond layer 40 on the silicon carbide wafer 10 into which ion injection of the impurity 30i is performed and a step of performing a heat treatment to the silicon carbide wafer 10 on which the diamond layer 40 is formed so as to form an impurity region 30 in which the impurity 30i is activated in the silicon carbide wafer 10.