SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To suppress destruction of data being kept by a memory cell when the data are read out from the memory cell.SOLUTION: The semiconductor storage device comprises: a memory cell array in which a plurality of memory cells are arrayed in the matrix state; a plurality of word lines connected to a row direction of the plurality of memory cells; a plurality of bit lines connected to a column direction of the plurality of memory cells; and a row selection section for multiply selecting the plurality of word lines. An equation of N/N≤(4×C×V)/(I×T) is satisfied when such assumption are made that: the number of memory cells connected respectively to the plurality of bit lines is N, a unit of the number of word lines multiply selected by the row selection section is N, a value of a capacitance of the bit lines divided by Nis C, a power source voltage is V, respective operation frequency of the plurality of memory cells is T, and a target value of a current read out through the plurality of respective bit lines is I.