METHOD FOR MANUFACTURING MULTILEVEL GRADATION PHOTOMASK AND METHOD FOR TRANSFERRING PATTERN

PROBLEM TO BE SOLVED: To reduce the number of drawing and developing processes by using film reduction of a resist pattern, as well as to improve uniformity within a film plane in the film reduction rate of a resist pattern between sparse and dense pattern regions.SOLUTION: A method for manufacturin...

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1. Verfasser:	NAGASHIMA SHO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce the number of drawing and developing processes by using film reduction of a resist pattern, as well as to improve uniformity within a film plane in the film reduction rate of a resist pattern between sparse and dense pattern regions.SOLUTION: A method for manufacturing a photomask is provided, including steps of: forming a first resist pattern covering a region for forming a light-shielding portion and a region for forming a translucent portion, in which the thickness of the resist film in the region for forming a translucent portion is smaller than the thickness of the resist film in the region for forming a light-shielding portion; and a step of reducing the film in the first resist pattern by excessively supplying active oxygen to the first resist pattern. Part of the active oxygen supplied to the first resist pattern is consumed by an exposed translucent film.