METHOD FOR FORMING COPPER THIN FILM

PROBLEM TO BE SOLVED: To provide a film forming method improving a film formation rate without using a special manufacturing apparatus in a method for forming a copper thin film on a base material by a sputtering method.SOLUTION: In a method for forming a copper thin film on a base material by a spu...

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Bibliographische Detailangaben
1. Verfasser:	FUTAKI SHOJI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a film forming method improving a film formation rate without using a special manufacturing apparatus in a method for forming a copper thin film on a base material by a sputtering method.SOLUTION: In a method for forming a copper thin film on a base material by a sputtering method, the film formation is performed under a deposition atmosphere of a mixed atmosphere where 60-95% by volume of argon gas and gas of molecules having a bond of a nitrogen atom and a hydrogen atom are mixed. Ammonium gas is preferably used as the gas of molecules having a bond of a nitrogen atom and a hydrogen atom.