SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure excellent in a yield, and a method of manufacturing the same.SOLUTION: The semiconductor device comprises: a substrate; a multilayer wiring layer formed on the substrate, and in which a plurality of wiring layers composed of wiring and an insulation layer is laminated; a memory circuit formed in a memory circuit area in the substrate in a plane view, and having one or more capacitive elements buried in the multilayer wiring layer and a peripheral circuit; and a logical circuit formed in a logical circuit area which is different from the memory circuit area in the substrate in the plane view. the capacitive element is composed of a lower electrode, a capacitive insulating film, an upper electrode, a buried electrode, and an upper connection wiring. The upper connection wiring and the buried electrode is integrally configured from the same material. Between the upper connection wiring and the lower electrode, at least one piece of wiring configuring the logical circuit is provided, and an upper surface of the upper connection wiring and an upper surface of the wiring configuring the logical circuit formed on the same wiring layer as the upper connection wiring configure the same surface.