STRUCTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a structure of a PN junction capable of further reducing volume without taking time for diffusion.SOLUTION: In a semiconductor device having a PN junction part, a low concentration substrate junction of a player and an nlayer steep in impurity concentration gradient...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOMACHI TOMONORI, SHIBAMURA JUNPEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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