STRUCTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a structure of a PN junction capable of further reducing volume without taking time for diffusion.SOLUTION: In a semiconductor device having a PN junction part, a low concentration substrate junction of a player and an nlayer steep in impurity concentration gradient...

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Bibliographische Detailangaben
Hauptverfasser:	KOMACHI TOMONORI, SHIBAMURA JUNPEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a structure of a PN junction capable of further reducing volume without taking time for diffusion.SOLUTION: In a semiconductor device having a PN junction part, a low concentration substrate junction of a player and an nlayer steep in impurity concentration gradient is formed, and a diffusion layer of a player in a low concentration is formed by making a surface concentration low and diffusing deeply so that it does not make a junction with the nlayer of the substrate.