COMPOSITION FOR POLISHING

PROBLEM TO BE SOLVED: To improve polishing speed of silicon.SOLUTION: A composition for polishing contains silica particles, and polyethylene amine comprising of NH(CHCHNH)H(n is an integer of 2 or more). The silica particles comprises particles used for polishing silicon and for example comprises a...

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Bibliographische Detailangaben
1. Verfasser:	YAMAZAKI TOMOKI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve polishing speed of silicon.SOLUTION: A composition for polishing contains silica particles, and polyethylene amine comprising of NH(CHCHNH)H(n is an integer of 2 or more). The silica particles comprises particles used for polishing silicon and for example comprises any one of colloidal silica, fumed silica, and a mixture of colloidal silica and fumed silica. The polyethylene amine comprises any one of diethylene triamine (NH(CHCHNH)H), triethylene triamine (NH(CHCHNH)H), tetraethylene pentamine (NH(CHCHNH)H) and pentaethylene hexamine (NH(CHCHNH)H).