DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a device manufacturing method to be a basic technology for manufacturing a micro/nano device using a film forming method to a base material by which a smooth film can be formed in a wide film thickness range from a thin film to a thick film in a micro/nano region pos...

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Bibliographische Detailangaben
Hauptverfasser:	OGOSHI MASAYUKI, INOUE SHIGEMI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP WORKING-UP
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a device manufacturing method to be a basic technology for manufacturing a micro/nano device using a film forming method to a base material by which a smooth film can be formed in a wide film thickness range from a thin film to a thick film in a micro/nano region position-selectively to the base material of a compound or the like containing an Si-O-Si bond.SOLUTION: The device manufacturing method includes a step of disposing a mask closely onto the base material 2 having a modified part 2a subjected to modification beforehand and position-selectively forming a film 6 in a gas phase so as to cover the modified part 2a and then a step of performing chemical etching of only the modified part 2a. Thereby, a micro tunnel structure comprising the base material 2 and the film 6 can be obtained.