DRAWING METHOD, METHOD FOR MANUFACTURING ORIGINAL PLATE, METHOD FOR MANUFACTURING STAMPER, AND METHOD FOR MANUFACTURING INFORMATION RECORDING DISK

PROBLEM TO BE SOLVED: To provide a drawing method capable of drawing a fine pattern with high precision on a resist layer, a method for manufacturing an original plate using the same, a method for manufacturing a stamper, and a method for manufacturing an information recording disk.SOLUTION: There i...

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Bibliographische Detailangaben
Hauptverfasser:	NAKADA KATSUYUKI, FUKUZAWA SHIGETOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a drawing method capable of drawing a fine pattern with high precision on a resist layer, a method for manufacturing an original plate using the same, a method for manufacturing a stamper, and a method for manufacturing an information recording disk.SOLUTION: There is prepared a workpiece 30 including a resist layer support material 34 composed of a material capable of being observed by a scanning electron microscope and a resist layer 36 covering the resist layer support material 34 in a lithographic area EA and formed on the resist layer support material 34 so as not to cover the resist layer support material 34 in at least a part of the inside non-lithographic area NEA1 and the outside non-lithographic area NEA2. The portion exposed from the resist layer 36 in the resist layer support material 34 is observed by the scanning electron microscope, and based on the observation result the position of the focal point of the electron beam is adjusted followed by irradiating the resist layer 36 with the electron beam and exposing the resist layer 36 to light in a predetermined lithographic pattern.