METHOD FOR PRODUCING SiC SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for producing SiC single crystal in high crystallinity by a solution method.SOLUTION: The method for producing SiC single crystal by a solution method includes the following steps of: making a gradual temperature in which the temperature is lowered toward the surface of a SiC solution 24 from the inside of the SiC solution 24 whose solvent is a melt of Si or Si/X (wherein X is one or more metals other than Si); and contacting the lower surface of an SiC seed crystal substrate 14 to the SiC solution 24 for growing the SiC single crystal. In the method, the SiC single crystal is produced by contacting the lower surface of the SiC seed crystal substrate 14 to the SiC solution 24 under conditions which satisfy the formula y