SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device allows crystal defects in an element region to be suppressed and capable of readily improving the accuracy of dicing and breaking, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device comprises a principal surface and a side surface. The side surface comprises a substrate 10 that includes a side wall of a notch 12 provided from the principal surface side, and a laminate 20 that is provided on the principal surface, extends on the side wall of the notch, and is composed of InGaAlN (0≤x≤1 and 0≤y≤1). For this reason, crystal defects and voids that tend to concentratedly occur in the notch 12 are avoided, thereby forming a semiconductor device with low defect density in an element region AR of the laminate and high reliability.