SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To examine the internal stress that affects a conductive film in a semiconductor device.SOLUTION: In the semiconductor device comprising an n-channel MOSFET formed on a single crystal silicon substrate, impurities are introduced to a conductive film so that a channel formation...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	ARAO TATSUYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To examine the internal stress that affects a conductive film in a semiconductor device.SOLUTION: In the semiconductor device comprising an n-channel MOSFET formed on a single crystal silicon substrate, impurities are introduced to a conductive film so that a channel formation region is subjected to tensile stress. In the semiconductor device comprising a p-channel MOSFET formed on the single crystal silicon substrate, the impurities are introduced to the conductive film so that the channel formation region is subjected to compression stress.