SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same with improved reliability.SOLUTION: The manufacturing method of the semiconductor device includes the steps of forming a gate electrode 120 on a semiconductor substrate 100 and a spacer 110 on both sides of the gate electrode 120, forming a capping pattern 170 on the gate electrode 120, and forming a metal contact 195 between the gate electrodes 120. The width of the capping pattern 170 is formed to be greater than the width of the gate electrode 120. It is possible for thus-manufactured semiconductor device to efficiently prevent electrical short circuits between the metal contact 195 and the gate electrode 120.