DIELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a dielectric structure formed on a heat-resisting substrate for forming a dielectric on a non-heat resisting substrate, and a peeling transition process to the non-heat resisting substrate of a dielectric film.SOLUTION: The dielectric structure 1 has a first substrate 5, an oxide film 4 and a first electrode layer 3 formed on the first substrate 5, and a dielectric layer 2 formed on the first electrode layer 3. Between the first substrate 5 and the first electrode layer 3, a coupling layer 6 formed by Ti and the like so as to cover at least a part of the first substrate 5 is provided. By optimizing the mechanical characteristics of an interface according to residual stress in the dielectric after forming, the peeling characteristics of the interface in which the dielectric layer 2 and the electrode layer 3 is not peeled from the heat-resisting substrate in a forming process and peeled in a transition process can be obtained.