SOLID-STATE IMAGING ELEMENT, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC INFORMATION APPARATUS

PROBLEM TO BE SOLVED: To form an insulator film in a gap between transfer electrodes without causing the deterioration of pixel characteristics.SOLUTION: During a thermal oxidation treatment, a silicon nitride film is embedded in a gap G between charge transfer electrodes as a thermal oxidation barrier film. The gap G between charge transfer electrodes and an opening 8b on the upper side of a light receiving portion 5 that is a photoelectric conversion portion are formed at the same time. In addition, a third insulator film 11 that is thinner and stable is formed as a result of thermal oxidation of a surface of the light receiving portion 5, a p-type impurity ion is injected in a surface portion of the light receiving portion 5 of an n-type semiconductor substrate 1 through this third insulator film 11 that is thin and stable, and a high-concentration surface p+ layer is formed. Furthermore, a second insulator film 10 is removed from within the gap G and a fourth insulator film 12 is embedded in the gap G again. The insulator film to be embedded in the gap G between charge transfer electrodes (the fourth insulator film 12) and a reflection suppression film on the light receiving portion 5 (the fourth insulator film 12) are manufactured in the same process with the same materials.