CONNECTING MATERIAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE MATERIAL AND THE DEVICE

PROBLEM TO BE SOLVED: To meet a need for lead-free connecting materials having satisfactory wetting properties and high heat resistance as a result of increases in the temperature of element connection parts due to increases in the capacity of power modules.SOLUTION: A Sn-based layer 11a is formed b...

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Hauptverfasser:	TOHIRA TOMOTAKE, IKEDA YASUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WELDING WORKING BY LASER BEAM
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Zusammenfassung:	PROBLEM TO BE SOLVED: To meet a need for lead-free connecting materials having satisfactory wetting properties and high heat resistance as a result of increases in the temperature of element connection parts due to increases in the capacity of power modules.SOLUTION: A Sn-based layer 11a is formed by cladding or press forming as an outermost layer of an alloy foil 13 which comprises Sn 11b and Al 12 as major components and which has an Al content of 40 mass% or less, thereby removing an oxide film from the alloy surface layer. Since the Al content of the alloy foil is 40 mass% or less, separation between the Sn and the Al is inhibited and wetting properties can be ensured. Thus, a connecting material and connection which each has high heat resistance and is lightweight are possible.