METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATION

PROBLEM TO BE SOLVED: To provide a method for etching a dual doped gate structure in a plasma etching chamber.SOLUTION: The method initiates with a step of defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etching chamber configured to introduce the silicon containing gas during an etching process is also provided.