SUBSTRATE TREATMENT APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a technology which can reduce a variation of the quality of films formed on a plurality of semiconductor substrates to be treated in a lump by a substrate treatment apparatus.SOLUTION: In a preliminary step for heat treatment, a forming position (height) of each of the plural gas supply holes 2322 is deviated from a position close to a central position between the adjacent wafers 200 in the height direction. Thus, when heat treatment is actually carried out, deviation in height is absorbed by a difference of elongation allowance caused by a difference of thermal expansion ratios between a boat 217 and a gas supply portion 2321 during the heat treatment, and treatment gas can be supplied efficiently and uniformly to surfaces of each wafer 200.