DIFFERENTIAL AMPLIFICATION SENSE AMPLIFIER CIRCUIT AND METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR EVALUATING THE SAME

DIFFERENTIAL AMPLIFICATION SENSE AMPLIFIER CIRCUIT AND METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR EVALUATING THE SAME

PROBLEM TO BE SOLVED: To provide a differential amplification sense amplifier circuit for detecting a defective characteristic margin of a memory cell due to a crystal defect etc. without an increase in the area of a memory cell region in a test of an SRAM.SOLUTION: In the differential amplification...

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Bibliographische Detailangaben
Hauptverfasser: SAKAGAMI MASAHIKO, AWAMURA SATOSHI
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a differential amplification sense amplifier circuit for detecting a defective characteristic margin of a memory cell due to a crystal defect etc. without an increase in the area of a memory cell region in a test of an SRAM.SOLUTION: In the differential amplification sense amplifier circuit, a PMOSFET 301 and an NMOSFET 303, and a PMOSFET 302 and an NMOSFET 304, are connected in a complementary manner. The PMOSFET 301 is connected via a control PMOSFET 305 to a power supply voltage, and the PMOSFET 303 is connected via a control PMOSFET 307 to the power supply voltage. The NMOSFET 302 is connected via a control NMOSFET 306 to a ground voltage, and the NMOSFET 304 is connected via a control NMOSFET 308 to the ground voltage.